A process useful for isolating active areas of semiconductor devices in which an isolation trench is created in a substrate, the isolation trench being lined with an oxidation barrier and filled with a thick film. An oxidation step is performed in which the thick film is oxidized. The oxidation is self-limiting...http://www.google.es/patents/US5472904?utm_source=gb-gplus-sharePatente US5472904 - Thermal trench isolation
