Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative...http://www.google.es/patents/US5840590?utm_source=gb-gplus-sharePatente US5840590 - Impurity gettering in silicon using cavities formed by helium implantation and annealing
Impurity gettering in silicon using cavities formed by helium implantation ...
