Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric...http://www.google.es/patents/US20080124907?utm_source=gb-gplus-sharePatente US20080124907 - Hafnium lanthanide oxynitride films
Número de solicitud: 11/515,143 Número de publicación: US 2008/0124907 A1 Fecha de presentación: 31 Ago 2006 Patente emitida: US7563730 ( Fecha de emisión 21 Jul 2009)
