A semiconductor device having a plurality of silicided polysilicon structures in which the silicidation of the polysilicon structures is approximately uniform is provided. Dummy polysilicon structures are formed on the substrate prior to silicidation. The dummy polysilicon structures allow the surface...http://www.google.es/patents/US20050056881?utm_source=gb-gplus-sharePatente US20050056881 - Dummy pattern for silicide gate electrode
