A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has...http://www.google.es/patents/US7186446?utm_source=gb-gplus-sharePatente US7186446 - Plasma enhanced ALD of tantalum nitride and bilayer
Plasma enhanced ALD of tantalum nitride and bilayer
