Shifts in the apparent charge stored by a charge storage region such as a floating gate in a non-volatile memory cell can occur because of electrical field coupling based on charge stored by adjacent cells. To account for the shift, compensations are applied when reading. When reading a selected word...http://www.google.es/patents/US20080158949?utm_source=gb-gplus-sharePatente US20080158949 - SYSTEMS FOR COMPLETE WORD LINE LOOK AHEAD WITH EFFICIENT DATA LATCH ASSIGNMENT IN NON-VOLATILE MEMORY READ OPERATIONS
SYSTEMS FOR COMPLETE WORD LINE LOOK AHEAD WITH EFFICIENT DATA LATCH ...
Número de solicitud: 11/617,550 Número de publicación: US 2008/0158949 A1 Fecha de presentación: 28 Dic 2006 Patente emitida: US7616506 ( Fecha de emisión 10 Nov 2009)
