Devices with conductive through-waver vias. In one embodiment, the device is formed by a method comprising providing a layer of semiconducting material, forming a layer of metal on a first side of the layer of semiconducting material, forming an opening in the layer of semiconducting material to thereby...http://www.google.es/patents/US8018069?utm_source=gb-gplus-sharePatente US8018069 - Through-hole contacts in a semiconductor device
