A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior...http://www.google.es/patents/US20010004479?utm_source=gb-gplus-sharePatente US20010004479 - PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
