In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective...http://www.google.es/patents/US8133797?utm_source=gb-gplus-sharePatente US8133797 - Protective layer to enable damage free gap fill
