A trench (21) is formed in a silicon substrate (1) on which an underlying oxide film (2) and a silicon nitride film (3) are formed. Then, a silicon oxide (11) is deposited by an HDP-CVD method to fill the trench (21) with the oxide. Further, a resist (41) including a second resist portion (42), and a...http://www.google.es/patents/US6268263?utm_source=gb-gplus-sharePatente US6268263 - Method of forming a trench type element isolation in semiconductor substrate
Method of forming a trench type element isolation in semiconductor substrate
