A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a semiconductor substrate. An ozone TEOS film is provided on these capacitors, and a protective film for covering the...http://www.google.es/patents/US6573587?utm_source=gb-gplus-sharePatente US6573587 - Metal oxide capacitor with hydrogen diffusion blocking covering
Metal oxide capacitor with hydrogen diffusion blocking covering
