The drain-to-source voltage and current for programming a selected nonvolatile memory cell 10 are achieved efficiently by pumping the source 11 of a selected cell 11 to a voltage less than the voltage VSS at the reference-voltage terminal of the memory cell array while, at the same time, pumping the...http://www.google.es/patents/US5412603?utm_source=gb-gplus-sharePatente US5412603 - Method and circuitry for programming floating-gate memory cell using a single low-voltage supply
Method and circuitry for programming floating-gate memory cell using a ...
