Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate....http://www.google.es/patents/US20070190807?utm_source=gb-gplus-sharePatente US20070190807 - Method for forming dielectric or metallic films
Número de solicitud: 10/591,629 Número de publicación: US 2007/0190807 A1 Fecha de presentación: 24 Feb 2005 Patente emitida: US7482286 ( Fecha de emisión 27 Ene 2009)
