According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is...http://www.google.es/patents/US8183165?utm_source=gb-gplus-sharePatente US8183165 - Plasma processing method
