A method of forming a MOSFET device is provided including the steps of forming N lightly doped source and drain extension regions in the top silicon layer, forming spacers above the N lightly doped source and drain extension regions and forming N source and N drain regions in the top silicon layer. A...http://www.google.es/patents/US6495887?utm_source=gb-gplus-sharePatente US6495887 - Argon implantation after silicidation for improved floating-body effects
Argon implantation after silicidation for improved floating-body effects
