A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method....http://www.google.es/patents/US7785976?utm_source=gb-gplus-sharePatente US7785976 - Method of forming a memory device incorporating a resistance-variable chalcogenide element
Method of forming a memory device incorporating a resistance-variable ...
