The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending...http://www.google.es/patents/US8152924?utm_source=gb-gplus-sharePatente US8152924 - CVD reactor comprising a gas inlet member
