An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at...http://www.google.es/patents/US20090001341?utm_source=gb-gplus-sharePatente US20090001341 - Phase Change Memory with Tapered Heater
Número de solicitud: 11/771,501 Número de publicación: US 2009/0001341 A1 Fecha de presentación: 29 Jun 2007 Patente emitida: US7906368 ( Fecha de emisión 15 Mar 2011)
