Embodiments of the present invention are directed to a process for forming small diameter vias at low temperatures. In preferred embodiments, through-substrate vias are fabricated by forming a through-substrate via; and depositing conductive material into the via by means of a flowing solution plating...http://www.google.es/patents/US7538032?utm_source=gb-gplus-sharePatente US7538032 - Low temperature method for fabricating high-aspect ratio vias and devices fabricated by said method
Low temperature method for fabricating high-aspect ratio vias and devices ...
