A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET, and a holding characteristic of a memory cell such...http://www.google.es/patents/US5698869?utm_source=gb-gplus-sharePatente US5698869 - Insulated-gate transistor having narrow-bandgap-source
Insulated-gate transistor having narrow-bandgap-source
