A method of controlling gate oxide thickness in the fabrication of semiconductor devices wherein a sacrificial gate oxide layer is formed on a semiconductor substrate surface. Nitrogens ions are implanted into select locations of the substrate through the sacrificial gate oxide layer, and the substrate...http://www.google.es/patents/US5330920?utm_source=gb-gplus-sharePatente US5330920 - Method of controlling gate oxide thickness in the fabrication of semiconductor devices
Method of controlling gate oxide thickness in the fabrication of ...
