A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory...http://www.google.es/patents/US7619237?utm_source=gb-gplus-sharePatente US7619237 - Programmable resistive memory cell with self-forming gap
Programmable resistive memory cell with self-forming gap
