The use of atomic layer deposition (ALD) to form a zirconium substituted layer of barium titanium oxide (BaTiO3), produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer...http://www.google.es/patents/US20080032424?utm_source=gb-gplus-sharePatente US20080032424 - ALD of Zr-substituted BaTiO3 films as gate dielectrics
ALD of Zr-substituted BaTiO3 films as gate dielectrics
Número de solicitud: 11/498,559 Número de publicación: US 2008/0032424 A1 Fecha de presentación: 3 Ago 2006 Patente emitida: US7985995 ( Fecha de emisión 26 Jul 2011)
