Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include an electrode, an adhesive material, an insulating material between the electrode and the adhesive material, wherein a portion...http://www.google.es/patents/US20040113136?utm_source=gb-gplus-sharePatente US20040113136 - PHASE CHANGE MEMORY AND METHOD THEREFOR
Número de solicitud: 10/319,753 Número de publicación: US 2004/0113136 A1 Fecha de presentación: 13 Dic 2002 Patente emitida: US6744088 ( Fecha de emisión 1 Jun 2004)