The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon...http://www.google.es/patents/US6890639?utm_source=gb-gplus-sharePatente US6890639 - Very low dielectric constant plasma-enhanced CVD films
Very low dielectric constant plasma-enhanced CVD films
