RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include...http://www.google.es/patents/US5976986?utm_source=gb-gplus-sharePatente US5976986 - Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching
Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching
