An integrated circuit is provided with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a silicide when the semiconductor substrate is reacted to form such a silicide. A gate dielectric is on the semiconductor substrate,...http://www.google.es/patents/US7250667?utm_source=gb-gplus-sharePatente US7250667 - Selectable open circuit and anti-fuse element
