In the semiconductor device according to the invention, a tubular storage node is formed, then slanting rotation implantation of impurity phosphorus ions is executed for changing the phosphorus concentration and the etching rate at the thermal phosphoric acid treatment time is changed for roughening...http://www.google.es/patents/US5962886?utm_source=gb-gplus-sharePatente US5962886 - Semiconductor memory and method of manufacturing thereof
Semiconductor memory and method of manufacturing thereof
