A method for integrating cap liner formation in back-end-of-line (BEOL) processing of a semiconductor device includes forming a trench structure within an insulating layer of the semiconductor device, depositing a first liner material over a top surface of the insulating layer, including sidewall and...http://www.google.es/patents/US7544609?utm_source=gb-gplus-sharePatente US7544609 - Method for integrating liner formation in back end of line processing
Method for integrating liner formation in back end of line processing
