A memory device and the method for manufacturing same is disclosed. The device comprises a first oxide layer on top of a substrate, a floating gate layer on top of the first oxide layer, a second oxide layer over the floating gate layer, wherein the second oxide layer and the floating gate layer have...http://www.google.es/patents/US7227218?utm_source=gb-gplus-sharePatente US7227218 - Method and system for forming source regions in memory devices
Method and system for forming source regions in memory devices
