A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide...http://www.google.es/patents/US7986014?utm_source=gb-gplus-sharePatente US7986014 - Semiconductor device
