A method for fabricating a capacitor of a semiconductor memory device, capable of obtaining a sufficient storage capacitance even when a memory cell area is reduced, thereby improving the integration degree of the semiconductor memory device. The method includes the steps of: forming a planarized insulating...http://www.google.es/patents/US5468671?utm_source=gb-gplus-sharePatente US5468671 - Method for fabricating stacked capacitor of semiconductor memory device
Method for fabricating stacked capacitor of semiconductor memory device
