A single level gate NVM device (10) includes p-channel and n-channel floating gate FETs (12, 14), an erasing capacitor (26), and a programming capacitor (28). The NVM device (10) is programmed by applying a programming voltage to the programming capacitor (28) and applying a ground voltage to the sources...http://www.google.es/patents/US5892709?utm_source=gb-gplus-sharePatente US5892709 - Single level gate nonvolatile memory device and method for accessing the same
Single level gate nonvolatile memory device and method for accessing the same
