In deposited silicon, n-type dopants such as phosphorus and arsenic tend to seek the surface of the silicon, rising as the layer is deposited. When a second undoped or p-doped silicon layer is deposited on n-doped silicon with no n-type dopant provided, a first thickness of this second silicon layer...http://www.google.es/patents/US20060087005?utm_source=gb-gplus-sharePatente US20060087005 - Deposited semiconductor structure to minimize N-type dopant diffusion and method of making
Deposited semiconductor structure to minimize N-type dopant diffusion and ...
Número de solicitud: 11/298,331 Número de publicación: US 2006/0087005 A1 Fecha de presentación: 9 Dic 2005 Patente emitida: US7405465 ( Fecha de emisión 29 Jul 2008)
