A technique to control segregation of impurities when reforming crystallinity and crystallization of a semiconductor film by using a laser beam irradiation is provided. The present invention is to irradiate the substrate with applying ultrasonic vibration while keeping the end portion of the substrate...http://www.google.es/patents/US8106330?utm_source=gb-gplus-sharePatente US8106330 - Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
Method for fabricating semiconductor film and semiconductor device and laser ...
