A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of: preparing an active matrix including a semiconductor substrate, a transistor, a bit line, a first ILD, a second...http://www.google.es/patents/US6927121?utm_source=gb-gplus-sharePatente US6927121 - Method for manufacturing ferroelectric random access memory capacitor
Method for manufacturing ferroelectric random access memory capacitor
