The present invention provides a semiconductor device that reduces the junction leak current and achieves an improvement in the reliability of the gate oxide film by minimizing divot formation and the occurrence of a kink and a method of manufacturing such a semiconductor device. A pad oxide film and...http://www.google.es/patents/USRE41696?utm_source=gb-gplus-sharePatente USRE41696 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
