A method for forming a dual gate includes providing a semiconductor substrate that has a first region of a first conductivity type and a second region of a second conductivity type. A gate insulating layer is formed on the semiconductor substrate. An initial metal nitride layer is formed on the gate...http://www.google.es/patents/US6815285?utm_source=gb-gplus-sharePatente US6815285 - Methods of forming dual gate semiconductor devices having a metal nitride layer
Methods of forming dual gate semiconductor devices having a metal nitride layer
