A semiconductor device is disclosed. The semiconductor device includes one or more charge control electrodes a plurality of charge control electrodes. The one or more charge control electrodes may control the electric field within the drift region of a semiconductor device. ...http://www.google.es/patents/US20040063269?utm_source=gb-gplus-sharePatente US20040063269 - Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability
Method for forming a semiconductor structure with improved smaller forward ...
Número de solicitud: 10/666,034 Número de publicación: US 2004/0063269 A1 Fecha de presentación: 18 Sep 2003 Patente emitida: US6991977 ( Fecha de emisión 31 Ene 2006)
