A method for making a semiconductor device may include forming a plurality of shallow trench isolation (STI) regions in a semiconductor substrate. Further, a plurality of layers may be deposited over the substrate to define respective superlattices over the substrate between adjacent STI regions and...http://www.google.es/patents/US7514328?utm_source=gb-gplus-sharePatente US7514328 - Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween
Method for making a semiconductor device including shallow trench isolation ...
