A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate...http://www.google.es/patents/US6461944?utm_source=gb-gplus-sharePatente US6461944 - Methods for growth of relatively large step-free SiC crystal surfaces
Methods for growth of relatively large step-free SiC crystal surfaces
