A programmable storage device includes a first diffusion region underlying a portion of a first trench defined in a semiconductor substrate and a second diffusion region occupying an upper portion of the substrate adjacent to the first trench. The device includes a charge storage stack lining sidewalls...http://www.google.es/patents/US20070020851?utm_source=gb-gplus-sharePatente US20070020851 - Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench and a method of using the same
Hot carrier injection programmable structure including discontinuous storage ...
Número de solicitud: 11/525,747 Número de publicación: US 2007/0020851 A1 Fecha de presentación: 22 Sep 2006 Patente emitida: US7459744 ( Fecha de emisión 2 Dic 2008)
