A NAND architecture non-volatile memory device and programming process is described that programs the various cells of strings of non-volatile memory cells by the application of differing word line pass voltages (Vpass) to the unselected word lines of the memory cell string or array during an programming...http://www.google.es/patents/US7499330?utm_source=gb-gplus-sharePatente US7499330 - Programming method for NAND EEPROM
