Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is...http://www.google.es/patents/US7815734?utm_source=gb-gplus-sharePatente US7815734 - Thin film transistor and method of fabricating the same
Thin film transistor and method of fabricating the same