An integrated circuit barrier structure disposed between high dielectric constant metal oxide and Cu or Al electrodes, for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes. Such barrier structure also protects...http://www.google.es/patents/US6900498?utm_source=gb-gplus-sharePatente US6900498 - Barrier structures for integration of high K oxides with Cu and Al electrodes
Barrier structures for integration of high K oxides with Cu and Al electrodes
