According to a method for manufacturing double RESURF (reduced SURface Field) LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistors, on-resistance of double RESURF LDMOS transistors has been improved by using a new tapered p top layer on the surface of the drift region of the transistor, thereby...http://www.google.es/patents/US6087232?utm_source=gb-gplus-sharePatente US6087232 - Fabrication method of lateral double diffused MOS transistors
Fabrication method of lateral double diffused MOS transistors
