A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the...http://www.google.es/patents/US20040266217?utm_source=gb-gplus-sharePatente US20040266217 - Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film
Method of forming high dielectric film using atomic layer deposition and ...
Número de solicitud: 10/873,256 Número de publicación: US 2004/0266217 A1 Fecha de presentación: 23 Jun 2004 Patente emitida: US7396719 ( Fecha de emisión 8 Jul 2008)
