A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first...http://www.google.es/patents/US7846821?utm_source=gb-gplus-sharePatente US7846821 - Multi-angle rotation for ion implantation of trenches in superjunction devices
Multi-angle rotation for ion implantation of trenches in superjunction devices
