A circuit for sensing a ferroelectric non-volatile information storage unit comprises a pre-charge circuit for applying a prescribed pre-charge voltage to a storage capacitor of the information storage unit. The pre-charge voltage causes a variation in a polarization charge of the storage capacitor,...http://www.google.es/patents/US6980458?utm_source=gb-gplus-sharePatente US6980458 - Sensing circuit for ferroelectric non-volatile memories
Sensing circuit for ferroelectric non-volatile memories
