A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along...http://www.google.es/patents/US6605527?utm_source=gb-gplus-sharePatente US6605527 - Reduced area intersection between electrode and programming element
Reduced area intersection between electrode and programming element
